so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 KI1557DH features trenchfet power mosfets fast switching to minimize gate and switching losses thermal resistance ratings t a =25 symbol typical maximum unit t 5sec 170 210 steady state 220 265 maximum junction-to-foot (drain) steady state r thjf 105 125 *surface mounted on 1" x 1" fr4 board. parameter maximum junction-to-ambient* r thja /w absolute maximum ratings t a =25 5 secs steady state 5 secs steady state drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j = 150 )* t a =25 1.3 1.2 -0.86 -0.77 a t a =85 0.9 0.8 -0.62 -0.55 a pulsed drain current i dm a continuous source current (diode conduction)* i s 0.5 0.39 -0.5 -0.39 a maximum power dissipation* t a =25 0.6 0.47 0.6 0.47 w t a =85 0.3 0.25 0.3 0.25 w operating junction and storage temperature range t j ,t stg *surface mounted on 1" x 1" fr4 board. parameter unit 12 -12 i d p d n-channel p-channel symbol -55to150 8 3-2 smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d =100 a n-ch 0.45 1 v ds =v gs ,i d =-100 a p-ch -0.45 1 n-ch 100 p-ch 100 v ds =9.6v,v gs =0v n-ch 1 v ds =-9.6v,v gs =0v p-ch -1 v ds =9.6v,v gs =0v,t j =85 n-ch 5 v ds =-9.6v,v gs =0v,t j =85 p-ch -5 v ds 5v,v gs =4.5v n-ch 3 v ds -5 v, v gs =-4.5v p-ch 2 v gs =4.5v,i d = 1.2a n-ch 0.195 0.235 v gs =-4.5v,i d = -0.77a p-ch 0.445 0.535 v gs =2.5v,i d = 1.0a n-ch 0.230 0.280 v gs =-2.5v,i d = -0.6a p-ch 0.735 0.880 v gs =1.8v,i d = 0.2a n-ch 0.284 0.340 v gs =-1.8v,i d = -0.20a p-ch 1.05 1.26 v ds =5v,i d = 1.2a n-ch 0.8 v ds =-5v,i d = -0.77a p-ch 1.2 i s =0.39a,v gs =0v n-ch 0.8 1.2 i s = -0.93a, v gs = 0 v p-ch -0.8 -1.2 n-channel n-ch 0.8 1.2 v ds =6v,v gs =4.5v,i d = 1.2a p-ch 1.1 1.8 n-ch 0.15 p-channel p-ch 0.3 v ds =-6v,v gs =-4.5v,i d = -0.1a n-ch 0.20 p-ch 0.25 n channel n-ch 15 25 v dd =6v,r l =12 p-ch 17 25 i d =0.5a,v gen =4.5v,r g =6 n-ch 25 40 p-ch 30 45 p-channel n-ch 25 40 v dd =-6v,r l =12 p-ch 15 25 i d =-0.5a,v gen =-4.5v,r g =6 n-ch 10 15 p-ch 10 15 i f =0.39a,d i /d t =100a/ s n-ch 20 40 i f = -0.39 a, d i /d t =100a/ s p-ch 25 40 * pulse test; pulse width 300 s, duty cycle 2%. pc source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time a ms v v na a v gs( th) i gss forward transconductance* v ds =0vv gs = 8v i dss testconditons q gs q gd i d(on) g fs gate threshold voltage gate body leakage zero gate voltage drain current on state drain current* rise time turn off delay time r ds(on) drain source on state resistance* diode forward voltage* total gate charge gate source charge gate drain charge v sd q g KI1557DH smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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